Electron field emission from porous silicon prepared at low anodisation currents. (19th January 2006)

• Record Type: Journal Article
• Authors: Evtukh, A.A.; Litovchenko, V.G.; Klyui, N.I.; Semenenko, M.O.; Kaganovich, E.B.; Manoilov, E.G.
• Is Part Of: International journal of nanotechnology. Volume 3:Number 1(2006)
• Page Start: 89
• Page End: 105
• Publication Date: 2006-01-19
• Subjects: electron field emission -- porous silicon -- resonance tunnelling -- photoluminescence -- diamond-like carbon film -- current stability -- nanocrystals -- energy band diagram -- work function -- field enhancement coefficient -- nanotechnology -- low anodisation; 620.505
• Languages: English
• ISSNs: 1475-7435

Abstract

The dependence of electron field emission (FE) characteristics of porous silicon (por-Si) prepared by anodisation at low current density without external bias is investigated. Effective electron FE from por-Si on p-Si flat surface was revealed. With growth of anodisation current (from 1 mA/cm² to 5 mA/cm²) the electron FE efficiency was decreased. Resonance tunnelling at electron field emission from por-Si was observed. The por-Si coating with thin diamond-like carbon film allowed the increase of the efficiency and stability of electron emission current significantly. The obtained experimental results on electron FE from por-Si on flat p-Si silicon surface were explained on the basis of electrical field enhancement coefficient growth, existence of dipole Si-H layer, lowering of por-Si electron affinity and growth of native SiO2 oxide on silicon surface. The model for explanation of resonance tunnelling from por-Si was proposed.