Formation of photoluminescent properties inherent to silicon quantum dots. (19th January 2006)

• Record Type: Journal Article
• Authors: Kaganovich, E.B.; Svechnikov, S.V.; Manoilov, E.G.; Kizyаk, I.M.
• Is Part Of: International journal of nanotechnology. Volume 3:Number 1(2006)
• Page Start: 106
• Page End: 119
• Publication Date: 2006-01-19
• Subjects: photoluminescence -- silicon quantum dots -- low-dimensional structures -- pulsed laser ablation -- metal doping -- defects -- local electron states -- nanotechnology -- nanocrystalline silicon films; 620.505
• Languages: English
• ISSNs: 1475-7435

Abstract

The analysis of original works devoted to preparation and investigation of nanocrystalline silicon (nc-Si) films containing Si quantum dots (QDs) that exhibit photoluminescence (PL) within the range 1.4 – 3.2 eV at room temperature is presented. Thin films were prepared by pulse laser deposition (PLD). Offered by authors doping these nc-Si films with gold in the growing process provided passivation of Si dangling bonds (DB) and some increase in the forbidden gap width of a barrier layer. Demonstrated are possibilities to explain and control stationary and kinetic characteristics of visible PL in the framework of the quantum-dimensional model as well as radiative exciton annihilation with taking into account Si nanocrystals (NCs) size distribution pronounced in PL features.