Band gap of silicon nanowires along [111] direction doped with Al atoms. (1st January 2013)

• Record Type: Journal Article
• Authors: Kausar, Sana; Joshi, Shirish
• Is Part Of: International journal of nanoparticles. Volume 6:Number 4(2013)
• Page Start: 275
• Page End: 281
• Publication Date: 2013-01-01
• Subjects: DFT -- GGA -- nanowire; Nanotechnology -- Periodicals; 620.505
• Languages: English
• ISSNs: 1753-2507

Abstract

In this work electronics property of hydrogen-passivated, free-standing silicon nanowire, oriented along [111] direction with triangular cross section was studied. Further the effect of doping of aluminium atoms on band structure is also analysed by DFT using GGA approximation. It is observed that the electronic properties of a semiconducting H-SiNW are dramatically altered upon adsorption.