Cite
HARVARD Citation
Shen, J. et al. (2018). Crystallographic plane and topography-dependent growth of semipolar InGaN nanorods on patterned sapphire substrates by molecular beam epitaxy. Nanoscale. 10 (46), pp. 21951-21959. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Shen, J. et al. (2018). Crystallographic plane and topography-dependent growth of semipolar InGaN nanorods on patterned sapphire substrates by molecular beam epitaxy. Nanoscale. 10 (46), pp. 21951-21959. [Online].