Precision wafer thinning and its surface conditioning technique. (14th January 2008)

• Record Type: Journal Article
• Authors: Young, H-T.; Lin, C-C.; Liao, H-T.; Yang, M.
• Is Part Of: International journal of material & product technology. Volume 31:Number 1(2008)
• Page Start: 36
• Page End: 45
• Publication Date: 2008-01-14
• Subjects: silicon wafers -- surface conditioning -- precision wafer thinning -- wet chemical etching -- surface finish -- subsurface damage -- grinding -- strength enhancement -- surface integrity -- back metal adhesion; Manufacturing processes -- Periodicals; Materials -- Testing -- Periodicals; 620.11
• Languages: English
• ISSNs: 0268-1900

Abstract

Experimental observations were conducted to investigate the effects of various parameters on the surface finish and SubSurface Damage (SSD) of ground silicon wafers. A novel design in wet chemical etching was proposed and implemented to provide wafers a means of strength enhancement while allowing the user to control the backside wafer surface finish. The results indicate that no propagating crystalline defect was accompanied, but leaving the wafer in a rather good surface integrity for back metal adhesion purposes.