Nanoscale Characterization of Active Doping Concentration in Boron‐Doped Individual Si Nanocrystals. Issue 23 (5th October 2018)

• Record Type: Journal Article
• Authors: Xu, Jie; Li, Dongke; Chen, Deyuan; Li, Wei; Xu, Jun
• Is Part Of: Physica status solidi. Volume 215:Issue 23(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-10-05
• Subjects: doping -- Kelvin probe force microscopy -- Si nanocrystals -- surface potential; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201800531
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : Doping of Si nanocrystals (NCs) is essential to the photonic and photovoltaic applications. In this work, individual Si NCs on Si substrate are prepared by excimer laser crystallization technique. The doping effect of boron (B) atoms is characterized at the nanoscale by Kelvin probe force microscopy (KPFM) measurement. The KPFM signal of B‐doped Si NCs is found opposite to that of intrinsic counterparts, indicating that active B doping is obtained. Moreover, the surface potential is reconstructed from KPFM images by Green's electrostatic theorem and deconvolution processing, and accordingly the active doping concentration is calculated around 10 17 –10 18 cm −3 . The doping efficiency is then estimated less than 1% and the possible reason is discussed. Abstract : B‐doped Si nanocrystals (NCs) are fabricated by excimer laser crystallization technique. The doping effect is then characterized by surface potential imaging using Kelvin probe force microscopy (KPFM) measurement and the following signal deconvolution processing. From the surface potential distribution and Poisson's equation, the active doping concentration of B atoms is calculated around 10 17 –10 18 cm −3 .