Cite
HARVARD Citation
Yu, X. et al. (2015). Analysis of high power microwave induced degradation and damage effects in AlGaAs/InGaAs pHEMTs. Microelectronics and reliability. 55 (8), pp. 1174-1179. [Online].
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Yu, X. et al. (2015). Analysis of high power microwave induced degradation and damage effects in AlGaAs/InGaAs pHEMTs. Microelectronics and reliability. 55 (8), pp. 1174-1179. [Online].