Cite
HARVARD Citation
Regoutz, A. et al. (2018). Interface chemistry and electrical characteristics of 4H-SiC/SiO2 after nitridation in varying atmospheres. Journal of materials chemistry. 6 (44), pp. 12079-12085. [Online].
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Regoutz, A. et al. (2018). Interface chemistry and electrical characteristics of 4H-SiC/SiO2 after nitridation in varying atmospheres. Journal of materials chemistry. 6 (44), pp. 12079-12085. [Online].