[(CH3)3NH]3Bi2I9: A Polar Lead‐Free Hybrid Perovskite‐Like Material as a Potential Semiconducting Absorber. Issue 68 (14th November 2017)

• Record Type: Journal Article
• Authors: Zhang, Jing; Han, Shiguo; Ji, Chengmin; Zhang, Weichuan; Wang, Yuyin; Tao, Kewen; Sun, Zhihua; Luo, Junhua
• Is Part Of: Chemistry. Volume 23:Issue 68(2017)
• Page Start: 17304
• Page End: 17310
• Publication Date: 2017-11-14
• Subjects: absorbing properties -- lead-free hybrid -- narrow band gap -- polar structure -- semiconducting behaviors; Chemistry -- Periodicals; 540
• DOI: 10.1002/chem.201703346
• Languages: English
• ISSNs: 0947-6539

Abstract

Abstract: Perovskite hybrids of lead organometal halides, most notably CH3 NH3 PbI3, have shown extremely promising applications in the field of optoelectronics, because of their remarkable semiconducting and light‐absorbing properties. However, two key issues—the toxicity of lead and the poor ambient instabilities—have restrained their further commercialization. Herein, we have designed a new stable polar lead‐free hybrid material by utilizing the strategy of cation substitution, [(CH3 )3 N]3 Bi2 I9 (1 ), which adopts the 0D inorganic perovskite‐like architecture by face‐sharing BiI6 octahedra. It is interesting that1 displays excellent absorbing properties with a narrow optical band gap of ≈2.0 eV, and positive temperature‐dependent conductivity confirms its semiconducting behaviors. In addition, 1 has good phase stability against decomposition under ambient conditions, much superior to that of CH3 NH3 PbI3 . This work suggests the potential of1 as a lead‐free semiconducting absorber with high phase stability for photoelectric applications. Abstract : Semiconductors : A new stable polar lead‐free hybrid material has been designed by utilizing the strategy of cation substitution, [(CH3 )3 N]3 Bi2 I9 (1 ), which displays excellent absorbing properties with an optical band gap of ≈2.0 eV and positive temperature‐dependent conductivity (see figure).