Effect of B-S co-doping on large diamonds synthesis under high pressure and high temperature. (August 2017)

• Record Type: Journal Article
• Authors: Zhang, He; Li, Shangsheng; Li, Guanghui; Su, Taichao; Hu, Meihua; Ma, Hongan; Jia, Xiaopeng; Li, Yong
• Is Part Of: International journal of refractory metals & hard materials. Volume 66(2017)
• Page Start: 26
• Page End: 30
• Publication Date: 2017-08
• Subjects: Large single-crystal diamond -- HPHT -- B-S co-doping -- Electrical property; Heat resistant alloys -- Periodicals; Refractory materials -- Periodicals; Metallography -- Periodicals; Alliages réfractaires -- Périodiques; Matériaux réfractaires -- Périodiques; Métallographie -- Périodiques; Heat resistant alloys; Metallography; Refractory materials; Periodicals; Electronic journals; 669.73
• DOI: 10.1016/j.ijrmhm.2017.02.002
• Languages: English
• ISSNs: 0263-4368

Abstract

Abstract: Large single-crystal diamonds with n -type semiconductor were synthesized from S/B-S co-doping FeNiCo-C system under high pressure and high temperature (HPHT) in this paper. It was found that the slight variation of the additive S content had not made obvious change for the color of diamonds synthesized from FeNiCo-C system. The B-S co-doping samples became more transparent and yellow than the samples added alone by S. The analysis of X-ray photoelectron spectroscopy (XPS) spectra and Fourier transform infrared (FTIR) spectroscopy showed the presence of B and S in the obtained diamonds. The electrical properties of large diamond crystals were tested by Van der Pauw method with a four-point probe. The highest value of the hall mobility was 628.726 cm 2 /vs. And the lowest value of the resistivity was 9.33 × 10 5 Ω·cm with boron additive of 0.8 wt.% and sulfur of 2 wt.% doping to diamond which was confirmed as n -type. This work indicated that B-S co-doping to synthesize diamond crystals was a trend to promote the electrical properties of large diamond crystals. Highlights: The S/B-S co-doping n-type semiconductor diamonds were synthesized under HPHT conditions from FeNiCo-C system. The B additive promoted the presence of S in structure of diamond. The resistivity were 4.417 × 10 6 Ωcm of diamond with 2 wt.% S and 9.33 × 10 5 Ωcm of diamond with 2 wt.% S and 0.8 wt.% B.