Diamond as substrate for 3C‐SiC growth: A TEM study. Issue 10 (5th June 2014)

• Record Type: Journal Article
• Authors: Lloret, F.; Piñero, J.; Araujo, D.; Villar, M. P.; Gheeraert, E.; Vo‐Ha, A.; Soulière, V.; Rebaud, M.; Carole, D.; Ferro, G.
• Is Part Of: Physica status solidi. Volume 211:Issue 10(2014:Oct.)
• Page Start: 2302
• Page End: 2306
• Publication Date: 2014-06-05
• Subjects: diamond -- heteropitaxy -- SiC -- TEM -- VLS; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201431179
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : Vapor–liquid–solid (V–L–S) growth of SiC on (100) diamond substrate is reported. The crystalline quality is evaluated by transmission electron microscopy (TEM). Diffraction contrast (CTEM) observations allowed confirming the growth of fully lattice relaxed SiC 3C‐type crystalline structure. Defects as dislocations at the diamond/SiC interface and stacking faults, in the thick SiC layer are revealed by high resolution TEM and CTEM. From the invisibility criteria, using dark field observations, 〈110〉 type Burger vector are identified.