A 1 × 64 Complementary Metal Oxide Semiconductor ranging sensor based on Current-Assisted Photonic Demodulators. (20th November 2008)

• Record Type: Journal Article
• Authors: Van Der Tempel, Ward; Van Nieuwenhove, Daniel; Grootjans, Riemer; Kuijk, Maarten
• Is Part Of: International journal of intelligent systems technologies and applications. Volume 5:Number 3/4(2008)
• Page Start: 237
• Page End: 245
• Publication Date: 2008-11-20
• Subjects: CMOS ranging sensors -- photonic demodulators -- TOF -- time-of-flight -- lock-in pixels; Artificial intelligence -- Periodicals; Intelligent control systems -- Periodicals; 006.3
• Languages: English
• ISSNs: 1740-8865

Abstract

A new Complementary Metal Oxide Semiconductor (CMOS) active pixel-ranging sensor is presented, realised as a 1 × 64 array of 30 µm × 30 µm lock-in pixels. The sensor is based on the Current-Assisted Photonic Demodulator (CAPD), implemented in a Standard CMOS 0.35 µm technology. The ranging pixel achieves 75% Fill-Factor, 0.22 A W−1 total QE and a demodulation bandwidth up to 70 MHz, both at 860 nm light. Range-finding is achieved through Modulated Wave Time-Of-Flight (TOF) measurements with a modulation frequency of 20 MHz. Distance measurements are presented. This sensor represents the first step towards integrating CAPD-based lock-in pixels in large TOF CMOS ranging systems.