Comparative studies on the physical and electronic properties of reactively sputtered ZnO and ZnON semiconductors. Issue 10 (December 2015)

• Record Type: Journal Article
• Authors: Ok, Kyung-Chul; Jeong, Hyun-Jun; Lee, Hyun-Mo; Park, Jozeph; Park, Jin-Seong
• Is Part Of: Ceramics international. Volume 41:Issue 10(2015)Part A
• Page Start: 13281
• Page End: 13284
• Publication Date: 2015-12
• Subjects: D. ZnO -- ZnON -- Oxide semiconductor -- X-ray absorption -- Thin film transistor; Ceramics -- Periodicals; Céramique industrielle -- Périodiques; Ceramics; Periodicals; Electronic journals; 666
• DOI: 10.1016/j.ceramint.2015.07.110
• Languages: English
• ISSNs: 0272-8842

Abstract

Abstract: Thin film transistors were fabricated using ZnO and ZnON semiconductors grown by DC reactive sputtering. After low vacuum annealing at 250 °C, ZnON devices exhibit superior electrical performance ( µ sat =56.3 cm 2 /Vs, V th =−1.59 V, and SS=0.51 V/dec) in comparison with ZnO devices ( µ sat =0.99 cm2/Vs, V th =3.28 V, and SS=1.22 V/dec). The physical and electronic structures in both materials were analyzed by X-ray diffraction and X-ray absorption spectroscopy, respectively. The chemical bonding states were also examined by X-ray photoelectron spectroscopy. Consequently, nitrogen incorporation in DC reactive sputtering is found to suppress crystallization and enhance electron transport by the formation of Zn–N bonds.