A quinoxaline based N-heteroacene interfacial layer for efficient hole-injection in quantum dot light-emitting diodes. Issue 27 (19th June 2015)

• Record Type: Journal Article
• Authors: Bai, Linyi; Yang, Xuyong; Ang, Chung Yen; Nguyen, Kim Truc; Ding, Tao; Bose, Purnandhu; Gao, Qiang; Mandal, Amal Kumar; Sun, Xiao Wei; Demir, Hilmi Volkan; Zhao, Yanli
• Is Part Of: Nanoscale. Volume 7:Issue 27(2015)
• Page Start: 11531
• Page End: 11535
• Publication Date: 2015-06-19
• Subjects: Nanoscience -- Periodicals; Nanotechnology -- Periodicals; 620.505
• DOI: 10.1039/c5nr03197d
• Languages: English
• ISSNs: 2040-3364

Abstract

Abstract : N-Heterocyclic quinoxalines as hole transport layer in quantum dot light-emitting diodes show a narrow bandgap. Abstract : A series of N-heterocyclic quinoxaline derivatives was successfully synthesized and applied as hole transport layers in quantum dot light-emitting diodes (QLEDs). By inducing sp 2 N-atoms into the quinoxaline backbone, the electron affinity of the obtained material was enhanced, and its optical properties and bandgap became tunable. Quinoxaline based N-heteroacenes show a narrow bandgap, high thermal stability, and aligned film morphology. The resulting N-heteroacene polymer based QLED exhibits superior performance to poly(9-vinylcarbazole) based QLED. This study presents a strategy towards the design of novel N-rich molecules for the fabrication of QLEDs with improved performance.