Silicon Wafers with Facet‐Dependent Electrical Conductivity Properties. Issue 48 (2nd November 2017)

• Record Type: Journal Article
• Authors: Tan, Chih‐Shan; Hsieh, Pei‐Lun; Chen, Lih‐Juann; Huang, Michael H.
• Is Part Of: Angewandte Chemie international edition. Volume 56:Issue 48(2017)
• Page Start: 15339
• Page End: 15343
• Publication Date: 2017-11-02
• Subjects: band bending -- electrical conductivity -- facet-dependent properties -- field-effect transistors -- silicon; Chemistry -- Periodicals; 540
• DOI: 10.1002/anie.201709020
• Languages: English
• ISSNs: 1433-7851

Abstract

Abstract: By breaking intrinsic Si (100) and (111) wafers to expose sharp {111} and {112} facets, electrical conductivity measurements on single and different silicon crystal faces were performed through contacts with two tungsten probes. While Si {100} and {110} faces are barely conductive at low applied voltages, as expected, the Si {112} surface is highly conductive and Si {111} surface also shows good conductivity. Asymmetrical I – V curves have been recorded for the {111}/{112}, {111}/{110}, and {112}/{110} facet combinations because of different degrees of conduction band bending at these crystal surfaces presenting different barrier heights to current flow. In particular, the {111}/{110} and {112}/{110} facet combinations give I – V curves resembling those of p–n junctions, suggesting a novel field effect transistor design is possible capitalizing on the pronounced facet‐dependent electrical conductivity properties of silicon. Abstract : Multifaceted : Using tungsten probes to make contacts to a Si wafer, facet‐dependent electrical conductivity properties of Si crystals are revealed. Asymmetrical I – V curves were recorded for the {111}/{112}, {111}/{110}, and {112}/{110} facet combinations, suggesting a different field‐effect transistor design is possible utilizing the intrinsic facet effects of silicon.