Fabrication of a 22.8% Efficient Back Contact Solar Cell With Localized Laser‐Doping. Issue 11 (21st August 2017)

• Record Type: Journal Article
• Authors: Ernst, Marco; Franklin, Evan; Fell, Andreas; Fong, Kean; Walter, Daniel; Wang, Er‐Chien; Kho, Teng; Blakers, Andrew
• Is Part Of: Physica status solidi. Volume 214:Issue 11(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-08-21
• Subjects: interdigitated back contacts -- laser ablation -- laser doping -- silicon -- solar cells; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201700318
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : Interdigitated back contact (IBC) solar cells offer one of the most promising routes towards highest device efficiencies but require finding of industrially feasible low cost production sequences. In this paper, the fabrication of a 22.8% efficient all‐laser‐doped IBC solar cell with localized boron and phosphorus doped contacts is reported. The laser‐based approach with localized emitter and back‐surface field regions reported here avoids costly patterning steps of the localized contacts. By means of numerical device simulations it is demonstrated that this cell is limited by recombination and contact resistivity of the localized contacts and an efficiency potential of 23.8% with improved laser parameters is demonstrated. Abstract : Here, the fabrication of a 22.8% efficient all‐laser‐doped interdigitated back contact solar cell is presented. Localized phosphorus and boron laser‐doping replaces conventional furnace diffusion to fabricate the contacts of the solar cell (red and green regions in the figure). Numerical device simulations demonstrate a pathway towards efficiencies of 23.8% with improved laser parameters.