Impact of Thermal Treatments in Crystalline Reconstruction and Electrical Properties of Diamond Ohmic Contacts Created by Boron Ion Implantation. Issue 11 (14th August 2017)

• Record Type: Journal Article
• Authors: Piñero, José C.; Villar, María P.; Araujo, Daniel; Montserrat, Josep; Antúnez, Bernat; Godignon, Philippe
• Is Part Of: Physica status solidi. Volume 214:Issue 11(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-08-14
• Subjects: diamonds -- electron energy loss spectroscopy -- ion implantation -- ohmic contacts; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201700230
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : To obtain p‐type doping of diamond through B ion implantation, thermal treatments are necessary to reconstruct the diamond lattice and to locate B atoms in substitutional lattice positions. The present contribution evaluates by STEM‐EELS and CL spectroscopy the amorphisation of diamond lattice under the B + bombardment and its subsequent reconstruction after the thermal treatment. In addition, TEM observations allowed localizing the boron spatial distribution. Carbon‐related peaks of EELS spectroscopy shows a nearly complete recovery of the diamond lattice after thermal treatment. Indeed, at 1600 °C, sp 2 /sp 3 ratio in implanted regions changes from 0.56 to 0.18 (0.15 value was measured before implantation). On the other hand, CL spectroscopy reveals how A‐Band and free exciton emission peaks, which are quenched by B + implantation, recover after annealing. Boron ion implantation was used to create ohmic contacts in two different diamond samples, treated with different annealing velocities. Crystalline reconstruction, evidenced by TEM data explains the related electric behaviour. Nanoscale evidences of amorphisation, lattice reconstruction and dopant activation are presented and discussed in this work. Abstract : In this work, ohmic contacts in semiconducting diamond are created by boron‐ion implantation. The resulting structures were electrically and structurally characterized, making evident a correlation between the experimentally acquired electric data and the crystalline reconstruction (achieved by different thermal treatments of the diamond‐implanted substrate). Quantification of the crystalline reconstruction in the implanted structures was carried out by various methodologies (CL, TEM and EELS).