Interface Engineering and Emergent Phenomena in Oxide Heterostructures. Issue 47 (21st August 2018)

• Record Type: Journal Article
• Authors: Huang, Zhen; Ariando, ; Renshaw Wang, Xiao; Rusydi, Andrivo; Chen, Jingsheng; Yang, Hyunsoo; Venkatesan, Thirumalai
• Is Part Of: Advanced materials. Volume 30:Issue 47(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-08-21
• Subjects: defect engineering -- formal polarization -- interlayer interaction -- orbital reconstruction -- oxide interfaces; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201802439
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract: Complex oxide interfaces have mesmerized the scientific community in the last decade due to the possibility of creating tunable novel multifunctionalities, which are possible owing to the strong interaction among charge, spin, orbital, and structural degrees of freedom. Artificial interfacial modifications, which include defects, formal polarization, structural symmetry breaking, and interlayer interaction, have led to novel properties in various complex oxide heterostructures. These emergent phenomena not only serve as a platform for investigating strong electronic correlations in low‐dimensional systems but also provide potentials for exploring next‐generation electronic devices with high functionality. Herein, some recently developed strategies in engineering functional oxide interfaces and their emergent properties are reviewed. Abstract : Perovskite oxide heterostructures serve as an important platform for exploring unusual electronic correlations and novel functionalities for next‐generation electronic devices. Thanks to the strong coupling between charges, spin, orbital, and structural degrees of freedom, the oxide interface can be subtly tuned via several strategies based on interfacial defects, formal polarization, breaking of structural symmetry, and interlayer interaction.