Radio frequency magnetron sputter deposited ZnO films doped with Al, Ga and Ti. (2nd January 2019)

• Record Type: Journal Article
• Authors: Chan, Kah-Yoong; Low, Cheng-Yang; Au, Benedict Wen-Cheun; Ng, Zi-Neng; Yeoh, Mian-En; Pang, Wai-Leong; Lee, Chu-Liang; Wong, Sew-Kin
• Is Part Of: Materials research innovations. Volume 23:Number 1(2019)
• Page Start: 22
• Page End: 26
• Publication Date: 2019-01-02
• Subjects: Zinc oxide -- R.F. magnetron sputtering -- structural properties -- optical properties -- electrical properties; Materials -- Research -- Periodicals; Matériaux -- Recherche -- Périodiques; 620.1105
• DOI: 10.1080/14328917.2017.1356013
• Languages: English
• ISSNs: 1432-8917

Abstract

Abstract: Zinc oxide (ZnO) is a key material in the field of transparent large-area electronics. Some of the ZnO applications in large-area electronics include sensors, transistors and solar cells. In this work, ZnO films doped with aluminium (Al), gallium (Ga) and titanium (Ti) with different doping concentrations were deposited on glass substrates via the radio frequency (R.F.) plasma magnetron sputtering technique. The correlations of different doping concentration with the structural, optical and electrical properties were investigated by Atomic Force Microscopy, Ultraviolet–Visible Spectrometer and Hall Electronic Transport Measurement System, respectively.