Aligned ZnO nanorod arrays growth on GaN QDs for excellent optoelectronic applications. (18th January 2016)

• Record Type: Journal Article
• Authors: Sang, Dandan; Li, Hongdong; Wang, Qinglin
• Is Part Of: Nanotechnology. Volume 27:Number 7(2016)
• Publication Date: 2016-01-18
• Subjects: ZnO nanorods -- GaN QDs -- optoelectronic applications; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/0957-4484/27/7/072501
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: Uniformly aligned ZnO nanorod (NR) arrays grown on GaN quantum dots (QDs) as preferred nucleation sites are imperative for designing field emission emitters, ultraviolet photodetectors and light-emitting diodes for a wide range of new optoelectronic applications. In a recent study (2015 Nanotechnology 26 415601 ), Qi et al reported a novel method of fabricating ZnO NRs arrays with uniform shape, the density of which is easily tunable by adjusting the density of GaN QDs. This approach opens a door to obtaining a combination of 0D and 1D structures for optoelectronic applications.