Highly sensitive visible to infrared MoTe2 photodetectors enhanced by the photogating effect. (26th September 2016)

• Record Type: Journal Article
• Authors: Huang, Hai; Wang, Jianlu; Hu, Weida; Liao, Lei; Wang, Peng; Wang, Xudong; Gong, Fan; Chen, Yan; Wu, Guangjian; Luo, Wenjin; Shen, Hong; Lin, Tie; Sun, Jinglan; Meng, Xiangjian; Chen, Xiaoshuang; Chu, Junhao
• Is Part Of: Nanotechnology. Volume 27:Number 44(2016)
• Publication Date: 2016-09-26
• Subjects: MoTe2 -- photodetectors -- visible to infrared -- photogating effect; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/0957-4484/27/44/445201
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: Two-dimensional materials are promising candidates for electronic and optoelectronic applications. MoTe2 has an appropriate bandgap for both visible and infrared light photodetection. Here we fabricate a high-performance photodetector based on few-layer MoTe2 . Raman spectral properties have been studied for different thicknesses of MoTe2 . The photodetector based on few-layer MoTe2 exhibits broad spectral range photodetection (0.6–1.55 μ m) and a stable and fast photoresponse. The detectivity is calculated to be 3.1 × 10 9 cm Hz 1/2 W −1 for 637 nm light and 1.3 × 10 9 cm Hz 1/2 W −1 for 1060 nm light at a backgate voltage of 10 V. The mechanisms of photocurrent generation have been analyzed in detail, and it is considered that a photogating effect plays an important role in photodetection. The appreciable performance and detection over a broad spectral range make it a promising material for high-performance photodetectors.