Temperature-dependent photoluminescence emission and Raman scattering from Mo1−xWxS2 monolayers. (27th September 2016)

• Record Type: Journal Article
• Authors: Chen, Yanfeng; Wen, Wen; Zhu, Yiming; Mao, Nannan; Feng, Qingliang; Zhang, Mei; Hsu, Hung-Pin; Zhang, Jin; Huang, Ying-Sheng; Xie, Liming
• Is Part Of: Nanotechnology. Volume 27:Number 44(2016)
• Publication Date: 2016-09-27
• Subjects: transition metal dichalcogenide -- 2D material -- alloy -- Raman spectroscopy -- photoluminescence -- temperature dependence; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/0957-4484/27/44/445705
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: 2D transition metal dichalcogenide (TMD) alloys with tunable band gaps have recently gained wide interest due to their potential applications in future nanoelectronics and optoelectronics. Here, we report the temperature-dependent photoluminescence (PL) and Raman spectra of Mo1− x W x S2 monolayers with W composition x = 0, 0.29, 0.53, 0.66 and 1 in the temperature range 93–493 K. We observed a linear temperature dependence of PL emission energy and Raman frequency. The PL intensity is enhanced at high temperature (>393 K). The temperature coefficients are negative for both PL and Raman bands, which may result from anharmonicity, thermal expansion and composition disorder.