Adjustable hydrazine modulation of single-wall carbon nanotube network field effect transistors from p-type to n-type. (27th September 2016)

• Record Type: Journal Article
• Authors: Dai, Ruixuan; Xie, Dan; Xu, Jianlong; Sun, Yilin; Sun, MengXing; Zhang, Cheng; Li, Xian
• Is Part Of: Nanotechnology. Volume 27:Number 44(2016)
• Publication Date: 2016-09-27
• Subjects: single-wall carbon nanotube -- field effect transistors -- hydrazine modulation -- n-type -- network film; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/0957-4484/27/44/445203
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: Single-wall carbon nanotube (SWCNT) network field effect transistors (FETs), which show decent p-type electronic properties, have been fabricated. The use of hydrazine as an aqueous solution and a strong n-type dopant for the SWCNTs is demonstrated in this paper. The electrical properties are obviously tuned by hydrazine treatment at different concentrations on the surface of the SWCNT network FETs. The transport behavior of SWCNTs can be modulated from p-type to n-type, demonstrating the controllable and adjustable doping effect of hydrazine. With a higher concentration of hydrazine, more electrons can be transferred from the hydrazine molecules to the SWCNT network films, thus resulting in a change of threshold voltage, carrier mobility and on-current. By cleaning the device, the hydrazine doping effects vanish, which indicates that the doping effects of hydrazine are reversible. Through x-ray photoelectron spectroscopy (XPS) characterization, the doping effects of hydrazine have also been studied.