Condition for the negative capacitance effect in metal–ferroelectric–insulator–semiconductor devices. (12th February 2016)

• Record Type: Journal Article
• Authors: Rusu, Alexandru; Saeidi, Ali; Ionescu, Adrian M
• Is Part Of: Nanotechnology. Volume 27:Number 11(2016)
• Publication Date: 2016-02-12
• Subjects: ferroelectric -- polarization -- minor loops -- negative capacitance -- surface potential -- NC-FET -- P(VDF-TrFE); Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/0957-4484/27/11/115201
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: In this paper, we report a detailed study of the negative capacitance field effect transistor (NCFET). We present the condition for the stabilization of the negative capacitance to achieve the voltage amplification across the active layer. The theory is based on Landau's theory of ferroelectrics combined with the surface potential model in all regimes of operation. We demonstrate the validity of the presented theory on experimental NCFETs using a gate stack made of P(VDF-TrFE) and SiO2 . The proposed analytical modeling shows good agreement with experimental data.