Scanning capacitance microscopy registration of buried atomic-precision donor devices. (3rd February 2015)

• Record Type: Journal Article
• Authors: Bussmann, E; Rudolph, M; Subramania, G S; Misra, S; Carr, S M; Langlois, E; Dominguez, J; Pluym, T; Lilly, M P; Carroll, M S
• Is Part Of: Nanotechnology. Volume 26:Number 8(2015)
• Publication Date: 2015-02-03
• Subjects: scanning tunneling microscopy -- scanning capacitance microscopy -- quantum computing -- nanoelectronics -- hydrogen depassivation lithography -- silicon -- phosphorus donors; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/0957-4484/26/8/085701
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: We show that a scanning capacitance microscope (SCM) can image buried delta-doped donor nanostructures fabricated in Si via a recently developed atomic-precision scanning tunneling microscopy (STM) lithography technique. A critical challenge in completing atomic-precision nanoelectronic devices is to accurately align mesoscopic metal contacts to the STM defined nanostructures. Utilizing the SCMs ability to image buried dopant nanostructures, we have developed a technique by which we are able to position metal electrodes on the surface to form contacts to underlying STM fabricated donor nanostructures with a measured accuracy of 300 nm. Low temperature ( T = 4 K) transport measurements confirm successful placement of the contacts to the donor nanostructures.