Control of the initial growth in atomic layer deposition of Pt films by surface pretreatment. (8th July 2015)

• Record Type: Journal Article
• Authors: Pyeon, Jung Joon; Cho, Cheol Jin; Baek, Seung-Hyub; Kang, Chong-Yun; Kim, Jin-Sang; Jeong, Doo Seok; Kim, Seong Keun
• Is Part Of: Nanotechnology. Volume 26:Number 30(2015)
• Publication Date: 2015-07-08
• Subjects: initial growth -- nucleation behavior -- atomic layer deposition -- Pt -- surface pretreatment; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/0957-4484/26/30/304003
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: The controllability of the nucleation behavior of Pt in atomic layer deposition (ALD) by surface pretreatments with H2 O, H2 S, and NH3 was investigated. The H2 O pretreatment on SiO2 and TiO2 surfaces had little effect on the nucleation of Pt. The H2 S pretreatment on the SiO2 and TiO2 surfaces significantly delayed the nucleation of Pt on them, while the NH3 pretreatment on the TiO2 surface led to fluent nucleation of Pt. In particular, a continuous Pt film was successfully formed even at an ultrathin thickness of approximately 2.2 nm by NH3 pretreatment. This work suggests that the pretreatment with H2 S and NH3 is an efficient way to control the nucleation of Pt in ALD without the support of any reactive species, such as plasma or O3 . Such a strategy enables the easy control of the size and distribution density of Pt nanoparticles for a wide range of applications.