Magnetoresistance oscillations in topological insulator Bi2Te3 nanoscale antidot arrays. (10th June 2015)

• Record Type: Journal Article
• Authors: Song, Min; Chu, Jiun-Haw; Zhou, Jian; Tongay, Sefaattin; Liu, Kai; Suh, Joonki; Chen, Henry; Seuk Kang, Jeong; Zou, Xuecheng; You, Long
• Is Part Of: Nanotechnology. Volume 26:Number 26(2015)
• Publication Date: 2015-06-10
• Subjects: topological insulator -- antidot array -- magnetoresistance -- coherence length -- surface states -- reactive ion etching; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/0957-4484/26/26/265301
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: Nanoscale antidot arrays were fabricated on a single-crystal microflake of topological insulator Bi2 Te3 . The introduction of antidot arrays significantly increased the resistance of the microflake, yet the temperature dependence of the resistance remains metallic. We observed that small oscillations that are periodic in magnetic field B appeared on top of the weak anti-localization magnetoresistance. Since the electron coherence length at low temperature becomes comparable to the feature size in our device, we argued that the magnetoresistance oscillations are the manifestation of quantum interference induced by the nanostructure. Our work demonstrates that the transport of topological insulators could indeed be controlled by artificially created nanostructures, and paves the way for future technological applications of this class of materials.