Design of high-disturbance driver system for SiC high-power module⁎. Issue 31 (2018)

• Record Type: Journal Article
• Authors: Zhu, Liangtao; Wang, Tao; Song, Jinqiu; Li, Bin; Zhang, Jianguo
• Is Part Of: IFAC-PapersOnLine. Volume 51:Issue 31(2018)
• Page Start: 690
• Page End: 693
• Publication Date: 2018
• Subjects: MOSFET -- SiC Power module -- Anti-interference -- Driver system; Automatic control -- Periodicals; 629.805
• DOI: 10.1016/j.ifacol.2018.10.159
• Languages: English
• ISSNs: 2405-8963

Abstract

Abstract: Compared to conventional Si power electronic device, the advantages of SiC power electronic device are high turn-off voltage, low on-resistance, high switching frequency and high efficiency. The high performance of the device is achieved by shortening the turn-on and turn-off times. However, the SiC power modules have higher dv/dt and di/dt, which leads to more CM (common mode) interference and DM (differential mode) interference certainly. In this paper, the operation principle of driver circuit is introduced firstly. Then, the high-disturbance driver system is verified by the SiC battery test and simulation equipment which is researched independently. In addition, an anti-interference driver circuit and driver line based on the actual engineering requirements are designed to decrease the CM interference and DM interference. Finally, the high anti-interference driver system for SiC power modules was verified by experiment.