Incoherent control of Goos–Hänchen shifts in a four-level InGaN/GaN quantum dot nanostructure. (10th March 2016)

• Record Type: Journal Article
• Authors: Solookinejad, G; Panahi, M; Ahmadi Sangachin, E; Asadpour, Seyyed Hossein
• Is Part Of: Laser physics. Volume 26:Number 4(2016:Apr.)
• Publication Date: 2016-03-10
• Subjects: Goos–Hänchen (GH) shifts -- incoherent pumping rates -- quantum dot nanostructure; Lasers -- Periodicals; 621.36605
• DOI: 10.1088/1054-660X/26/4/045202
• Languages: English
• ISSNs: 1054-660X

Abstract

Abstract: In this paper, we propose a new configuration for manipulating Goos–Hänchen (GH) shifts in reflected and transmitted probe beams in a fixed geometrical scheme with a confined four-level InGaN/GaN quantum dot nanostructure. Here, the four-level quantum dot nanostructure is driven by a weak probe light, a coherent coupling field, and two broadband polarized fields that serve as the incoherent pumping fields. We theoretically show that by modulation of the external coupling field, incoherent pumping rates, and detuning of the probe light, the GH shifts in the reflected and transmitted probe light can be controlled. Our results show that enhanced GH shifts of reflected and transmitted probe beams can be obtained by simultaneous use of incoherent pumping rates and detuning of the probe light. Moreover, we find that the GH shifts in both reflected and transmitted probe beams can be negative or positive at certain angles of the incident probe field. Thus, these results may provide some new possibilities for technological applications in all-optical systems based on nanostructure devices.