Spin transport in p-type germanium. (18th March 2016)

• Record Type: Journal Article
• Authors: Rortais, F; Oyarzún, S; Bottegoni, F; Rojas-Sánchez, J-C; Laczkowski, P; Ferrari, A; Vergnaud, C; Ducruet, C; Beigné, C; Reyren, N; Marty, A; Attané, J-P; Vila, L; Gambarelli, S; Widiez, J; Ciccacci, F; Jaffrès, H; George, J-M; Jamet, M
• Is Part Of: Journal of physics. Volume 28:Number 16(2016)
• Publication Date: 2016-03-18
• Subjects: spintronics -- germanium -- spin injection -- spin pumping -- spin Hall effect; Condensed matter -- Periodicals; Matière condensée -- Périodiques; Vaste stoffen; Vloeistoffen; Natuurkunde; Electronic journals; Computer network resources; 530.4105
• DOI: 10.1088/0953-8984/28/16/165801
• Languages: English
• ISSNs: 0953-8984

Abstract

Abstract: We report on the spin transport properties in p -doped germanium (Ge- p ) using low temperature magnetoresistance measurements, electrical spin injection from a ferromagnetic metal and the spin pumping-inverse spin Hall effect method. Electrical spin injection is carried out using three-terminal measurements and the Hanle effect. In the 2–20 K temperature range, weak antilocalization and the Hanle effect provide the same spin lifetime in the germanium valence band (≈1 ps) in agreement with predicted values and previous optical measurements. These results, combined with dynamical spin injection by spin pumping and the inverse spin Hall effect, demonstrate successful spin accumulation in Ge. We also estimate the spin Hall angle in Ge- p (6– ) at room temperature, pointing out the essential role of ionized impurities in spin dependent scattering.