Evolution of the doping regimes in the Al-doped SnO2 nanoparticles prepared by a polymer precursor method. (13th February 2015)

• Record Type: Journal Article
• Authors: Aragón, F H; Coaquira, J A H; Villegas-Lelovsky, L; da Silva, S W; Cesar, D F; Nagamine, L C C M; Cohen, R; Menéndez-Proupin, E; Morais, P C
• Is Part Of: Journal of physics. Volume 27:Number 9(2015)
• Publication Date: 2015-02-13
• Subjects: doped oxide semiconductor -- substitutional position -- interstitial position; Condensed matter -- Periodicals; Matière condensée -- Périodiques; Vaste stoffen; Vloeistoffen; Natuurkunde; Electronic journals; Computer network resources; 530.4105
• DOI: 10.1088/0953-8984/27/9/095301
• Languages: English
• ISSNs: 0953-8984

Abstract

Abstract: In this study, we report on the structural and hyperfine properties of Al-doped SnO2 nanoparticles synthesized by a polymer precursor method. The x-ray diffraction data analysis carried out using the Rietveld refinement method shows the formation of only rutile-type structures in all samples, with decreasing of the mean crystallite size as the Al content. A systematic study of the unit cell, as well as the vicinity of the interstitial position show strong evidence of two doping regimes in the rutile-type structure of SnO2 . Below 7.5 mol% doping a dominant substitutional solution of Al +3 and Sn 4+ -ions is determined. However, the occupation of both substitutional and interstitial sites is determined above 7.5 mol% doping. These findings are in good agreement with theoretical ab initio calculations.