Dipole Formation at the MoO3/Conjugated Polymer Interface. (25th September 2018)

• Record Type: Journal Article
• Authors: Yin, Yanting; Sibley, Alex; Quinton, Jamie S.; Lewis, David A.; Andersson, Gunther G.
• Is Part Of: Advanced functional materials. Volume 28:Number 46(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-09-25
• Subjects: dipole at interfaces -- electron spectroscopy -- polymer based electronics; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.201802825
• Languages: English
• ISSNs: 1616-301X

Abstract

Abstract: MoO3 is known as high work function (WF) transparent metal oxides. It is used as anode buffer layer in organic based solar cells because of its capability to extract electrons and inject holes from the active layer due to its high WF. Here a broad range of techniques is used to determine the energy levels of the bulk heterojunction (BHJ) and MoO3 to determine that the minimum deposition thickness to achieve a closed layer is 1 nm due to penetration of the evaporated MoO3 into the BHJ. The investigation shows that upon evaporation of the MoO3, a strong dipole is formed at the extended interface between the active layer and the MoO3 and that the strength of the dipole increases with increasing thickness of the MoO3 layer and saturates at 2.2 eV at a thickness around 3 nm. Abstract : MoO3 forms a strong dipole at the interface to P3HT/PC61BM. The dipole increases with increasing thickness of the MoO3 layer and saturates at 2.2 eV at a thickness around 3 nm of MoO3 . The formation of the strong dipole is of high importance for the charge transport over the MoO3 /polymer interface.