Controllable Epitaxial Growth of Core–Shell PbSe@CsPbBr3 Wire Heterostructures. Issue 45 (25th September 2018)

• Record Type: Journal Article
• Authors: Fan, Chao; Xu, Xing; Yang, Ke; Jiang, Feng; Wang, Songyang; Zhang, Qinglin
• Is Part Of: Advanced materials. Volume 30:Issue 45(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-09-25
• Subjects: carrier transfer -- core–shell wire heterostructures -- CsPbBr3 -- optoelectronics -- PbSe; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201804707
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract: 1D semiconductor core–shell wire heterostructures are crucial for high‐performance optical and optoelectronic device applications, but they are limited to the traditional semiconductor families. Here, the conformal epitaxy of CsPbBr3 shell on PbSe wire core is realized to form the core–shell PbSe@CsPbBr3 wire heterostructures via a chemical vapor deposition route. The Pb‐particle catalysts at the tips of the PbSe wires grown by vapor–liquid–solid provide the nucleation sites for the in situ rapid growth of CsPbBr3 cube crystals, which serve as the adatom collector for the following shell growth due to the faster adsorption of the evaporated source atoms on them than on the sidewalls of PbSe wires. This determines the directional growth of the shell along the PbSe wires from the tip to bottom. The spectral and transient photoluminescence reveals the efficient photogenerated carrier transfer from the shell to the core. Importantly, the photodetectors (PDs) based on the heterostructures show responsivity up to 4.7 × 10 4 A W −1 under 405 nm light illumination, and a wavelength‐dependent photocurrent polarity with the excitation of the light from near‐ to mid‐infrared (IR), which indicates potential applications in IR PDs and novel optoelectronic logical circuits. Abstract : The controllable growth of core–shell PbSe@CsPbBr3 wire heterostructures is demonstrated. The carrier transfer from the CsPbBr3 shell to the PbSe core is revealed by spectral and transient photoluminescence. Photodetectors based on this heterostructure show high performance under 405 nm light excitation and a wavelength‐dependent photocurrent polarity with the illumination of the light from near‐ to mid‐IR light.