Dynamic Electronic Doping for Correlated Oxides by a Triboelectric Nanogenerator. Issue 45 (21st September 2018)

• Record Type: Journal Article
• Authors: Chen, Yuliang; Zhang, Ying; Wang, Zhaowu; Zhan, Taotao; Wang, Yi‐Cheng; Zou, Haiyang; Ren, Hui; Zhang, Guobin; Zou, Chongwen; Wang, Zhong Lin
• Is Part Of: Advanced materials. Volume 30:Issue 45(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-09-21
• Subjects: correlated oxides -- electronic doping -- three‐terminal devices -- triboelectricnanogenerators -- vanadium dioxide; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201803580
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract: The metal–insulator transition of vanadium dioxide (VO2 ) is exceptionally sensitive to charge density and electron orbital occupancy. Thus three‐terminal field‐effect transistors with VO2 channels are widely adopted to control the phase transition by external gating voltage. However, current leakage, electrical breakdown, or interfacial electrochemical reactions may be inevitable if conventional solid dielectrics or ionic‐liquid layers are used, which possibly induce Joule heating or doping in the VO2 layer and make the voltage‐controlled phase transition more complex. Here, a triboelectric nanogenerator (TENG) and a VO2 film are combined for a novel TENG‐VO2 device, which can overcome the abovementioned challenges and achieve electron‐doping‐induced phase modulation. By taking advantage of the TENG structure, electrons can be induced in the VO2 channel and thus adjust the electronic states of the VO2, simultaneously. The modulation degree of the VO2 resistance depends on the temperature, and the major variation occurs when the temperature is in the phase‐transition region. The accumulation of electrons in the VO2 channel also is simulated by finite element analysis, and the electron doping mechanism is verified by theoretical calculations. The results provide a promising approach to develop a novel type of tribotronic transistor and new electronic doping technology. Abstract : The structure of the triboelectric nanogenerator (TENG) is first applied on correlated oxides. The induced electron‐doping by the TENG effectively adjusts the electronic states and phase transition of vanadium dioxide (VO2 ), a prototypical binary strongly correlated oxide. The modulation degree depends on the temperature, i.e., a pronounced resistance variation occurs at close to the phase‐transition region of the VO2 .