The effect of humidity on the dielectric properties of (In + Nb) co-doped SnO2 ceramics. Issue 2 (February 2019)

• Record Type: Journal Article
• Authors: Wang, J.; Guo, Y.M.; Wang, S.T.; Tong, L.; Sun, J.; Zhu, G.B.; Wang, C.C.
• Is Part Of: Journal of the European Ceramic Society. Volume 39:Issue 2/3(2019)
• Page Start: 323
• Page End: 329
• Publication Date: 2019-02
• Subjects: Ceramics -- Dielectric properties -- Polaron -- Critical doping level -- Humidity sensitivity; Ceramic materials -- Periodicals; Composite materials -- Periodicals; Matériaux céramiques -- Périodiques; Composites -- Périodiques; Ceramic materials; Composite materials; Periodicals; Electronic journals; 666.05
• DOI: 10.1016/j.jeurceramsoc.2018.09.040
• Languages: English
• ISSNs: 0955-2219

Abstract

Abstract: (In + Nb) co-doped SnO2 ceramics, (In0.5 Nb0.5 ) x Sn1− x O2 (INSO) with x = 0, 0.0005, 0.001, 0.01, and 0.1, were prepared by sol-gel method. Dielectric properties and humidity sensitivity of these samples were systematically investigated. Our results revealed that there exists a critical doping level of x c ∼ 0.001 separating the dielectric behavior and humidity sensitivity of INSO into two different regions: In region I of x ≤ x c, the main relaxing species are I n Sn ' -O H O complex dipoles, which greatly enhances the dielectric constant. The humidity sensitivity was found to decrease with increasing doping level and have positive effect on the dielectric properties of the samples. In region II of x > x c, the main relaxing species are localized holes, which leads to polaronic relaxation and gradually weakens the dielectric constant enhancement. The humidity sensitivity was found to increase with increasing doping level and have negative effect on the dielectric properties of the samples.