Cite
HARVARD Citation
Dinh, D. et al. (n.d.). Exciton localization in polar and semipolar (112̅2) In0.2Ga0.8N/GaN multiple quantum wells. Semiconductor science and technology. p. . [Online].
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Dinh, D. et al. (n.d.). Exciton localization in polar and semipolar (112̅2) In0.2Ga0.8N/GaN multiple quantum wells. Semiconductor science and technology. p. . [Online].