Cite
HARVARD Citation
Alper, C. et al. (n.d.). Underlap counterdoping as an efficient means to suppress lateral leakage in the electron–hole bilayer tunnel FET. Semiconductor science and technology. p. . [Online].
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Alper, C. et al. (n.d.). Underlap counterdoping as an efficient means to suppress lateral leakage in the electron–hole bilayer tunnel FET. Semiconductor science and technology. p. . [Online].