Cite
HARVARD Citation
Kurtz, A. et al. (n.d.). Electrical mechanisms for carrier compensation in homoepitaxial nonpolar m-ZnO doped with nitrogen. Semiconductor science and technology. p. . [Online].
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Kurtz, A. et al. (n.d.). Electrical mechanisms for carrier compensation in homoepitaxial nonpolar m-ZnO doped with nitrogen. Semiconductor science and technology. p. . [Online].