Cite
HARVARD Citation
Tang, Z. et al. (n.d.). Dependence of memory characteristics on the (ZrO2)x(SiO2)1−x elemental composition for charge trap flash memory applications. Semiconductor science and technology. p. . [Online].
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Tang, Z. et al. (n.d.). Dependence of memory characteristics on the (ZrO2)x(SiO2)1−x elemental composition for charge trap flash memory applications. Semiconductor science and technology. p. . [Online].