Josephson Effect in a Few‐Hole Quantum Dot. Issue 44 (10th September 2018)

• Record Type: Journal Article
• Authors: Ridderbos, Joost; Brauns, Matthias; Shen, Jie; de Vries, Folkert K.; Li, Ang; Bakkers, Erik P. A. M.; Brinkman, Alexander; Zwanenburg, Floris A.
• Is Part Of: Advanced materials. Volume 30:Issue 44(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-09-10
• Subjects: silicon quantum electronics -- superconductor–semiconductor hybrids; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201802257
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract: A Ge–Si core–shell nanowire is used to realize a Josephson field‐effect transistor with highly transparent contacts to superconducting leads. By changing the electric field, access to two distinct regimes, not combined before in a single device, is gained: in the accumulation mode the device is highly transparent and the supercurrent is carried by multiple subbands, while near depletion, the supercurrent is carried by single‐particle levels of a strongly coupled quantum dot operating in the few‐hole regime. These results establish Ge–Si nanowires as an important platform for hybrid superconductor–semiconductor physics and Majorana fermions. Abstract : Ge–Si core–shell nanowires are used to realize a Josephson field‐effect transistor. Changing the electric field shows two distinct regimes: in the accumulation mode, the device is highly transparent and the supercurrent is carried by multiple subbands. Near depletion, the supercurrent is carried by single‐particle levels of a strongly coupled quantum dot operating in the few‐hole regime.