Reversible resistive switching behaviour in CVD grown, large area MoOx. Issue 42 (24th August 2018)

• Record Type: Journal Article
• Authors: Rahman, Fahmida; Ahmed, Taimur; Walia, Sumeet; Mayes, Edwin; Sriram, Sharath; Bhaskaran, Madhu; Balendhran, Sivacarendran
• Is Part Of: Nanoscale. Volume 10:Issue 42(2018)
• Page Start: 19711
• Page End: 19719
• Publication Date: 2018-08-24
• Subjects: Nanoscience -- Periodicals; Nanotechnology -- Periodicals; 620.505
• DOI: 10.1039/c8nr04407d
• Languages: English
• ISSNs: 2040-3364

Abstract

Abstract : Reversible resistive switching behaviour is observed in MoO x memory devices, at relatively low set/reset voltages, with switching ratios exceeding 10 3 . Abstract : Non-volatile resistive memory devices are theorized to be the most promising pathway towards analog memory and neuromorphic computing. Two-dimensional MoO3 is a versatile planar transition metal oxide, whose properties can be readily tuned, making it anywhere from a wide bandgap semiconductor to a semi-metal. Successful integration of such a planar metal oxide into resistive memory can enable adaptive and low power memory applications. Here, we investigate the non-volatile and reversible resistive switching behaviour of oxygen deficient MoO x in a cross-point metal/insulator/metal (MIM) architecture. Layered MoO x films are synthesised using chemical vapour deposition (CVD) and reveal excellent resistive switching performance with relatively low electroforming and operating voltages. Switching ratios of ∼10 3 and stable data retention of >10 4 s are achieved. As such, this work demonstrates the viability of MoO x as a resistive memory element and paves the way for future two-dimensional resistive memory technologies.