Wigner function approach to nano device simulation. (15th March 2007)

• Record Type: Journal Article
• Authors: Kosina, Hans
• Is Part Of: International journal of computational science and engineering. Volume 2:Number 3/4(2006)
• Page Start: 100
• Page End: 118
• Publication Date: 2007-03-15
• Subjects: device simulation -- quantum transport -- Wigner function -- Monte Carlo method -- resonant tunnelling diodes -- nanodevices -- mesoscopic devices -- transport models -- carrier scattering -- barrier structures -- electronic transport -- nanoscale technology -- nanotechnology; Computer science -- Mathematics -- Periodicals; Computer simulation -- Mathematical aspects -- Periodicals; Computational intelligence -- Periodicals; 004.015105
• Languages: English
• ISSNs: 1742-7185

Abstract

Coherent transport in mesoscopic devices is well described by the Schrodinger equation supplemented by open boundary conditions. When electronic devices are operated at room temperature, however, a realistic transport model needs to include carrier scattering. In this work, the kinetic equation for the Wigner function is employed as a model for dissipative quantum transport. Carrier scattering is treated in an approximate manner through a Boltzmann collision operator. The development of Monte-Carlo algorithms for this quantum kinetic equation is complicated by the fact that, as opposed to the semi-classical case, the integral kernel is no longer positive. This so-called negative sign problem requires the introduction of new numerical techniques in order to obtain stable Monte-Carlo methods. A particular method for the solution of the stationary Wigner equation is presented. Applications to single barrier and double barrier structures are discussed.