Wurtzite-derived ternary I–III–O2 semiconductors. Issue 2 (17th March 2015)

• Record Type: Journal Article
• Authors: Omata, Takahisa; Nagatani, Hiraku; Suzuki, Issei; Kita, Masao
• Is Part Of: Science and technology of advanced materials. Volume 16:Issue 2(2015)
• Publication Date: 2015-03-17
• Subjects: II–VI semiconductor -- I–III–VI2 semiconductor -- oxide semiconductor; 72.80.Ey -- 78.40.Fy -- 81.05.Dz; Materials -- Technological innovations -- Periodicals; 620.112
• DOI: 10.1088/1468-6996/16/2/024902
• Languages: English
• ISSNs: 1468-6996

Abstract

Abstract: Ternary zincblende-derived I–III–VI2 chalcogenide and II–IV–V2 pnictide semiconductors have been widely studied and some have been put to practical use. In contrast to the extensive research on these semiconductors, previous studies into ternary I–III–O2 oxide semiconductors with a wurtzite-derived β -NaFeO2 structure are limited. Wurtzite-derived β -LiGaO2 and β -AgGaO2 form alloys with ZnO and the band gap of ZnO can be controlled to include the visible and ultraviolet regions. β -CuGaO2, which has a direct band gap of 1.47 eV, has been proposed for use as a light absorber in thin film solar cells. These ternary oxides may thus allow new applications for oxide semiconductors. However, information about wurtzite-derived ternary I–III–O2 semiconductors is still limited. In this paper we review previous studies on β -LiGaO2, β -AgGaO2 and β -CuGaO2 to determine guiding principles for the development of wurtzite-derived I–III–O2 semiconductors.