Electronic properties of unstrained unrelaxed narrow gap InAsxSb1−x alloys. (3rd February 2016)

• Record Type: Journal Article
• Authors: Suchalkin, S; Ludwig, J; Belenky, G; Laikhtman, B; Kipshidze, G; Lin, Y; Shterengas, L; Smirnov, D; Luryi, S; Sarney, W L; Svensson, S P
• Is Part Of: Journal of physics. Volume 49:Number 10(2016)
• Publication Date: 2016-02-03
• Subjects: narrow gap semiconductors -- metamorphic materials -- III–V semiconductors; Physics -- Periodicals; 530
• DOI: 10.1088/0022-3727/49/10/105101
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: The electronic properties of unstrained unrelaxed InAs x Sb1− x alloys have been determined in a wide range of alloy compositions using IR magnetospectroscopy, magnetotransport and IR photoluminescence. All studied alloys have n-type background doping with electron concentration decreasing with the Sb content. The composition dependence of the background doping concentration follows an empirical exponential law in a wide range of compositions. Both bandgap and electron effective mass dependence on alloy composition exhibit negative bowing reaching lowest values at x = 0.63: E g = 0.10 eV, m * = 0.0082 m 0 at 4.2 K. The bowing coefficient of 0.038 m 0 obtained for the electron effective mass is in good agreement with that obtained from the Kane model.