Magnetic tunnel transistor with a perpendicular Co/Ni multilayer sputtered on a Si/Cu(1 0 0) Schottky diode. (4th August 2016)

• Record Type: Journal Article
• Authors: Vautrin, C; Lu, Y; Robert, S; Sala, G; Lenoble, O; Petit-Watelot, S; Devaux, X; Montaigne, F; Lacour, D; Hehn, M
• Is Part Of: Journal of physics. Volume 49:Number 35(2016)
• Publication Date: 2016-08-04
• Subjects: magnetic tunnel transistor -- hot electrons -- non colinear magnetism -- giant magnetoresistance; Physics -- Periodicals; 530
• DOI: 10.1088/0022-3727/49/35/355003
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: We have studied a magnetic tunnel transistor (MTT) structure based on a MgO tunnelling barrier emitter and a [Co/Ni]5 /Cu multilayer base on a Si (0 0 1) substrate. Evident links between the Schottky barrier preparation techniques and the properties of perpendicular magnetic anisotropy (PMA) in the [Co/Ni] multilayer have been revealed by combined x-ray diffraction and magnetometry analyses. The Si surface treated by hydrofluoric acid (HF) is found to favour a Cu [1 0 0] texture growth which is detrimental to the [Co/Ni]5 PMA properties. However, a Ta layer insertion can restore the [1 1 1] texture required for the PMA appearance. By carefully engineering the base crystallographic texture structure, we obtain both a good quality of Schottky barrier and PMA property; a magneto-current ratio of 162% has been measured for MTTs with a spin-valve base composed of one magnetic layer having in-plane anisotropy and another one with out-of-plane anisotropy.