Bipolar resistive switching in YMnO3/Nb:SrTiO3 pn-heterojunctions. (3rd October 2016)

• Record Type: Journal Article
• Authors: Bogusz, Agnieszka; Bürger, Danilo; Skorupa, Ilona; Schmidt, Oliver G; Schmidt, Heidemarie
• Is Part Of: Nanotechnology. Volume 27:Number 45(2016)
• Publication Date: 2016-10-03
• Subjects: YMnO3 -- Nb:SrTiO3 -- bipolar resistive switching -- pn-heterojunction -- forward current -- reverse current; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/0957-4484/27/45/455201
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: Resistively switching oxides are promising materials for use in electronic applications such as nonvolatile memories, logic gates, and artificial synapses. This work presents the bipolar resistive switching (BRS) in YMnO3 /Nb:SrTiO3 pn-heterojunctions. A thermally driven electroforming process is required prior to the observed BRS. Results indicate that the BRS in YMnO3 /Nb:SrTiO3 originates from the combined effects of charge trapping and detrapping processes along with the electro-migration of charged point defects in the depletion layer of the pn-heterojunction. It is shown that the built-in voltage of the pn-heterojunctions can be tuned by the oxygen partial pressure during growth of the YMnO3 thin film and impacts the working parameters of the resistively switching cell. This study provides a guideline for material engineering of bipolar resistive switches based on pn-heterojunctions.