High performance FETs based on ZnO nanowires synthesized by low cost methods. (25th October 2016)

• Record Type: Journal Article
• Authors: Florica, Camelia; Costas, Andreea; Kuncser, Andrei; Preda, Nicoleta; Enculescu, Ionut
• Is Part Of: Nanotechnology. Volume 27:Number 47(2016)
• Publication Date: 2016-10-25
• Subjects: single ZnO nanowires -- aqueous solution growth -- thermal oxidation in air -- high performance transistors; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/0957-4484/27/47/475303
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: Single ZnO nanowires prepared by wet and dry methods are used as channels in high performance back-gated field effect transistors working in low power operation mode, with on–off ratios up to 10 5 and mobilities up to 167 cm 2 V −1 s −1 . The nanowires' properties, generated by the growth techniques, influence the parameters of the transistors, therefore a throughout comparison is made.