Monolithic integration of metastable α-In2Se3 thin film on H-passivated Si(1 1 1) for photovoltaic applications. (10th March 2016)

• Record Type: Journal Article
• Authors: Li, Handong; Ren, Wuyang; Wang, Gaoyun; Gao, Lei; Peng, Ruoming; Li, Hui; Zhang, Pingyi; Shafa, Muhammad; Tong, Xin; Luo, Siyuan; Zhou, Zhihua; Ji, Haining; Wu, Jiang; Niu, Xiaobin; Wang, Zhiming
• Is Part Of: Journal of physics. Volume 49:Number 14(2016)
• Publication Date: 2016-03-10
• Subjects: chalcogenides -- silicon -- heterojunctions -- molecular beam epitaxy -- photovoltaics; Physics -- Periodicals; 530
• DOI: 10.1088/0022-3727/49/14/145108
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: The metastable α -In2 Se3 thin film is epitaxially integrated on H-passivated Si (1 1 1) substrates to build a novel heterojunction solar cell by molecular beam epitaxy. The growth of In2 Se3 on H–Si(1 1 1) at low temperature initiates as an amorphous layer then followed by re-crystalline of α phase film. Electronic transport properties of α -In2 Se3 /p-Si heterostructure are studied. Analysis of the temperature dependence of thermionic emission in reverse bias indicates a barrier height of ~0.21 eV at the α -In2 Se3 /p-Si interface. A photovoltaic conversion efficiency of 2% is measured for the heterojunction with optimized In2 Se3 film thickness.