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HARVARD Citation
Lin, Z. et al. (2016). Influence of In content in InGaN barriers on crystalline quality and carrier transport of GaN-based light-emitting diodes. Journal of physics. p. . [Online].
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Lin, Z. et al. (2016). Influence of In content in InGaN barriers on crystalline quality and carrier transport of GaN-based light-emitting diodes. Journal of physics. p. . [Online].