Metal electrode dependent field effect transistors made of lanthanide ion-doped DNA crystals. (8th February 2016)
- Record Type:
- Journal Article
- Title:
- Metal electrode dependent field effect transistors made of lanthanide ion-doped DNA crystals. (8th February 2016)
- Main Title:
- Metal electrode dependent field effect transistors made of lanthanide ion-doped DNA crystals
- Authors:
- Dugasani, Sreekantha Reddy
Hwang, Taehyun
Kim, Jang Ah
Gnapareddy, Bramaramba
Kim, Taesung
Park, Sung Ha - Abstract:
- Abstract: We fabricated lanthanide ion (Ln 3+, e.g. Dy 3+, Er 3+, Eu 3+, and Gd 3+ )-doped self-assembled double-crossover (DX) DNA crystals grown on the surface of field effect transistors (FETs) containing either a Cr, Au, or Ni electrode. Here we demonstrate the metal electrode dependent FET characteristics as a function of various Ln 3+ . The drain–source current ( I ds ), controlled by the drain–source voltage ( V ds ) of Ln 3+ -doped DX DNA crystals with a Cr electrode on an FET, changed significantly under various gate voltages ( V g ) due to the relative closeness of the work function of Cr to the energy band gap of Ln 3+ -DNA crystals compared to those of Au and Ni. For Ln 3+ -DNA crystals on an FET with either a Cr or Ni electrode at a fixed V ds, I ds decreased with increasing V g ranging from −2 to 0 V and from 0 to +3 V in the positive and negative regions, respectively. By contrast, I ds for Ln 3+ -DNA crystals on an FET with Au decreased with increasing V g in only the positive region due to the greater electronegativity of Au. Furthermore, Ln 3+ -DNA crystals on an FET exhibited behaviour sensitive to V g due to the appreciable charge carriers generated from Ln 3+ . Finally, we address the resistivity and the mobility of Ln 3+ -DNA crystals on an FET with different metal electrodes obtained from I ds – V ds and I ds – V g curves. The resistivities of Ln 3+ -DNA crystals on FETs with Cr and Au electrodes were smaller than those of pristine DNA crystals on anAbstract: We fabricated lanthanide ion (Ln 3+, e.g. Dy 3+, Er 3+, Eu 3+, and Gd 3+ )-doped self-assembled double-crossover (DX) DNA crystals grown on the surface of field effect transistors (FETs) containing either a Cr, Au, or Ni electrode. Here we demonstrate the metal electrode dependent FET characteristics as a function of various Ln 3+ . The drain–source current ( I ds ), controlled by the drain–source voltage ( V ds ) of Ln 3+ -doped DX DNA crystals with a Cr electrode on an FET, changed significantly under various gate voltages ( V g ) due to the relative closeness of the work function of Cr to the energy band gap of Ln 3+ -DNA crystals compared to those of Au and Ni. For Ln 3+ -DNA crystals on an FET with either a Cr or Ni electrode at a fixed V ds, I ds decreased with increasing V g ranging from −2 to 0 V and from 0 to +3 V in the positive and negative regions, respectively. By contrast, I ds for Ln 3+ -DNA crystals on an FET with Au decreased with increasing V g in only the positive region due to the greater electronegativity of Au. Furthermore, Ln 3+ -DNA crystals on an FET exhibited behaviour sensitive to V g due to the appreciable charge carriers generated from Ln 3+ . Finally, we address the resistivity and the mobility of Ln 3+ -DNA crystals on an FET with different metal electrodes obtained from I ds – V ds and I ds – V g curves. The resistivities of Ln 3+ -DNA crystals on FETs with Cr and Au electrodes were smaller than those of pristine DNA crystals on an FET, and the mobility of Ln 3+ -DNA crystals on an FET with Cr was relatively higher than that associated with other electrodes. … (more)
- Is Part Of:
- Journal of physics. Volume 49:Number 10(2016)
- Journal:
- Journal of physics
- Issue:
- Volume 49:Number 10(2016)
- Issue Display:
- Volume 49, Issue 10 (2016)
- Year:
- 2016
- Volume:
- 49
- Issue:
- 10
- Issue Sort Value:
- 2016-0049-0010-0000
- Page Start:
- Page End:
- Publication Date:
- 2016-02-08
- Subjects:
- DNA -- self-assembly -- lanthanide ion -- doping -- metal electrode
Physics -- Periodicals
530 - Journal URLs:
- http://ioppublishing.org/ ↗
http://iopscience.iop.org/0022-3727 ↗ - DOI:
- 10.1088/0022-3727/49/10/105501 ↗
- Languages:
- English
- ISSNs:
- 0022-3727
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 8442.xml